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Condensed Matter > Materials Science

Title: A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Authors: Xiwen Liu, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson III, Deep Jariwala
(Submitted on 18 Dec 2020 (v1), last revised 5 Jan 2021 (this version, v2))
Abstract: We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Strongly Correlated Electrons (cond-mat.str-el); Applied Physics (physics.app-ph)
Cite as: arXiv:2012.10019 [cond-mat.mtrl-sci]
  (or arXiv:2012.10019v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Deep Jariwala [view email]
[v1] Fri, 18 Dec 2020 02:34:35 GMT (721kb)
[v2] Tue, 5 Jan 2021 19:09:47 GMT (419kb)
Which authors of this paper are endorsers? | Disable MathJax (What is MathJax?)

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