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Condensed Matter > Mesoscale and Nanoscale Physics
Title: CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors
(Submitted on 3 Apr 2023 (v1), last revised 5 Apr 2024 (this version, v2))
Abstract: Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k${\Omega}$${\mu}$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.
Submission history
From: Max C. Lemme [view email][v1] Mon, 3 Apr 2023 17:45:45 GMT (1195kb)
[v2] Fri, 5 Apr 2024 21:11:18 GMT (1499kb)
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