Title: Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Abstract: Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 \mu m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.8% measured at sensor bias voltage of 200 V before irradiation becomes 96.5% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.5% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 48 and 44 ps at HV = 200 and 300 V, respectively.