Title: Effect of disorder on Berry curvature and quantum metric in two-band gapped graphene

Abstract: The geometric properties of parameter space are mostly described by Berry curvature and quantum metric, which is the imaginary and real part of quantum geometric tensor, respectively. In this work, we calculate the dressed Berry curvature and quantum metric containing eight Feynman diagrams, which is proportional to the leading-order of the concentration of impurities. For a two-band gapped graphene model, we find the disorder does not break the original symmetry of Berry curvature and quantum metric but decrease (increase) the absolute value of conductor (valence) band. We show how impurities affect the Berry curvature and quantum metric, laying the foundation for the study of the influence of impurities on the electron transport properties.